Invention Grant
- Patent Title: Semiconductor light-emitting devices including contact layers to form reflective electrodes
- Patent Title (中): 包括形成反射电极的接触层的半导体发光器件
-
Application No.: US13828346Application Date: 2013-03-14
-
Publication No.: US09012884B2Publication Date: 2015-04-21
- Inventor: Jung-Sub Kim , Sung-Won Hwang , Geun-Woo Ko , Cheol-Soo Sone , Sung-Hyun Sim , Jin-Sub Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0073489 20120705
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/30 ; H01L33/14 ; H01L33/32 ; H01L33/00
Abstract:
A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.
Public/Granted literature
- US20140008608A1 SEMICONDUCTOR LIGHT-EMITTING DEVICES INCLUDING CONTACT LAYERS TO FORM REFLECTIVE ELECTRODES Public/Granted day:2014-01-09
Information query
IPC分类:
