Invention Grant
US09012889B2 Field effect transistor using graphene, phosphorus-doped graphene, and methods of producing the same
有权
使用石墨烯，磷掺杂石墨烯的场效应晶体管及其制造方法
- Patent Title: Field effect transistor using graphene, phosphorus-doped graphene, and methods of producing the same
- Patent Title (中): 使用石墨烯，磷掺杂石墨烯的场效应晶体管及其制造方法
-
Application No.: US13960996Application Date: 2013-08-07
-
Publication No.: US09012889B2Publication Date: 2015-04-21
- Inventor: Hyoyoung Lee
- Applicant: Research & Business Foundation Sungkyunkwan University
- Applicant Address: KR Suwon-si
- Assignee: Research & Business Foundation Sungkyunkwan University
- Current Assignee: Research & Business Foundation Sungkyunkwan University
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2012-0136477 20121128
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L29/66
Abstract:
A field effect transistor using a channel layer including a phosphorus-doped graphene and a method of fabricating the same are provided. Further, a phosphorus-doped graphene and a method of producing the same are provided. The field effect transistor includes: a source electrode and a drain electrode formed on a substrate; and a channel layer comprising a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode.
Public/Granted literature
- US20140145148A1 FIELD EFFECT TRANSISTOR USING GRAPHENE, PHOSPHORUS-DOPED GRAPHENE, AND METHODS OF PRODUCING THE SAME Public/Granted day:2014-05-29
Information query
IPC分类:
