Invention Grant
- Patent Title: Light-emitting diode having a roughened surface
- Patent Title (中): 具有粗糙表面的发光二极管
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Application No.: US13858504Application Date: 2013-04-08
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Publication No.: US09012933B2Publication Date: 2015-04-21
- Inventor: Liang-Sheng Chi , Pei-Chia Chen , Chih-Hao Chen
- Applicant: Epistar Corporation
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L29/06 ; H01L31/00 ; H01L33/22 ; H01L27/15

Abstract:
A light-emitting diode includes a substrate, the substrate including an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the upper surface, wherein the first type semiconductor layer includes a first portion and a second portion, and the second portion includes an edge surrounding the first portion; a light-emitting layer on the first portion; and a second type semiconductor layer on the light-emitting layer, wherein the second portion includes a first surface and a second surface, and a first distance is between the first surface and the upper surface, and a second distance is between the second surface and the upper surface and is smaller than the first distance; wherein the first surface is rougher than the second surface, and the second surface is located at the edge.
Public/Granted literature
- US20140299901A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-10-09
Information query
IPC分类: