Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US14449104Application Date: 2014-07-31
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Publication No.: US09012946B2Publication Date: 2015-04-21
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Tsinghua University , Hon Hai Precision Industry Co., Ltd.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201111107515 20110429
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/44 ; H01L21/02 ; H01L33/12 ; B82Y20/00

Abstract:
A light emitting diode includes a patterned carbon nanotube layer, a first semiconductor layer, a second semiconductor layer, an active layer stacked on an epitaxial growth surface of a substrate in that sequence. A first portion of the patterned carbon nanotube layer is covered by the first semiconductor layer and a second portion of the patterned carbon nanotube layer is exposed. A first electrode is electrically connected with the second semiconductor layer. A second electrode electrically is electrically connected with the second portion of the patterned carbon nanotube layer.
Public/Granted literature
- US20140339592A1 LIGHT EMITTING DIODE Public/Granted day:2014-11-20
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