Invention Grant
- Patent Title: Adjustable field effect rectifier
- Patent Title (中): 可调整场效应整流器
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Application No.: US13398591Application Date: 2012-02-16
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Publication No.: US09012954B2Publication Date: 2015-04-21
- Inventor: Alexei Ankoudinov , Vladimir Rodov
- Applicant: Alexei Ankoudinov , Vladimir Rodov
- Applicant Address: NL Amsterdam
- Assignee: STMicroelectronics International B.V.
- Current Assignee: STMicroelectronics International B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H01L29/68
- IPC: H01L29/68 ; H01L29/78 ; H01L29/861 ; H01L29/417 ; H01L29/08

Abstract:
An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages without significant negative resistance, while also permitting fast recovery and operation at high frequency without large electromagnetic interference.
Public/Granted literature
- US20120211798A1 ADJUSTABLE FIELD EFFECT RECTIFIER Public/Granted day:2012-08-23
Information query
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