Invention Grant
- Patent Title: MOS transistor
- Patent Title (中): MOS晶体管
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Application No.: US14017024Application Date: 2013-09-03
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Publication No.: US09012957B2Publication Date: 2015-04-21
- Inventor: Vincent Quenette
- Applicant: STMicroelectronics S.A.
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Seed IP Law Group PLLC
- Priority: FR1258240 20120904
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L29/66 ; H01L29/423
Abstract:
A MOS transistor including a U-shaped channel-forming semiconductor region and source and drain regions having the same U shape located against the channel-forming region on either side thereof, the internal surface of the channel-forming semiconductor region being coated with a conductive gate, a gate insulator being interposed.
Public/Granted literature
- US20140061723A1 MOS TRANSISTOR Public/Granted day:2014-03-06
Information query
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