Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13951744Application Date: 2013-07-26
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Publication No.: US09012976B2Publication Date: 2015-04-21
- Inventor: Hiroyasu Tanaka
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-Ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-Ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-167689 20120727
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/66 ; H01L27/115

Abstract:
According to one embodiment, the stacked body includes a plurality of insulating layers and a plurality of conductive layers alternately stacked on the underlying film. The first insulating film is provided in a trench piercing the stacked body in a stacking direction of the stacked body and separating the stacked body into a plurality of resistance element blocks in a first direction on the underlying film. The resistance element blocks include a line portion formed of the conductive layer extending in a second direction crossing the first direction and the stacking direction and a hole formation portion provided to protrude in the first direction from the line portion and including a second insulating film provided in a hole piercing the stacked body in the stacking direction.
Public/Granted literature
- US20140027835A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-01-30
Information query
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