Invention Grant
US09012977B2 Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics
有权
具有选择晶体管的半导体存储器件具有不均匀的阈值电压特性
- Patent Title: Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics
- Patent Title (中): 具有选择晶体管的半导体存储器件具有不均匀的阈值电压特性
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Application No.: US14154834Application Date: 2014-01-14
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Publication No.: US09012977B2Publication Date: 2015-04-21
- Inventor: Sunil Shim , Jaehun Jeong , Hansoo Kim , Su-Youn Yi , Jaehoon Jang , Sunghoi Hur
- Applicant: Sunil Shim , Jaehun Jeong , Hansoo Kim , Su-Youn Yi , Jaehoon Jang , Sunghoi Hur
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2009-0015937 20090225
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/66 ; H01L27/02 ; H01L27/115
Abstract:
Provided is a semiconductor memory device. In the semiconductor memory device, a lower selection gate controls a first channel region that is defined at a semiconductor substrate and a second channel region that is defined at the lower portion of an active pattern disposed on the semiconductor substrate. The first threshold voltage of the first channel region is different from the second threshold voltage of the second channel region.
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