Invention Grant
- Patent Title: Field effect transistor devices with regrown p-layers
- Patent Title (中): 具有再生长p层的场效应晶体管器件
-
Application No.: US13798919Application Date: 2013-03-13
-
Publication No.: US09012984B2Publication Date: 2015-04-21
- Inventor: Lin Cheng , Anant Agarwal , John Palmour
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L21/8242
- IPC: H01L21/8242 ; H01L29/66 ; H01L29/78 ; H01L27/06 ; H01L29/739 ; H01L29/06 ; H01L29/16
Abstract:
A transistor device includes a drift layer having a first conductivity type, a body layer on the drift layer, the body layer having a second conductivity type opposite the first conductivity type, and a source region on the body layer, the source region having the first conductivity type. The device further includes a trench extending through the source region and the body layer and into the drift layer, a channel layer on the inner sidewall of the trench, the channel layer having the second conductivity type and having an inner sidewall opposite an inner sidewall of the trench, a gate insulator on the inner sidewall of the channel layer, and a gate contact on the gate insulator.
Public/Granted literature
- US20140264562A1 Field Effect Transistor Devices with Regrown P-Layers Public/Granted day:2014-09-18
Information query
IPC分类:
