Invention Grant
- Patent Title: Inductor device and semiconductor device
- Patent Title (中): 电感器件和半导体器件
-
Application No.: US14148893Application Date: 2014-01-07
-
Publication No.: US09013025B2Publication Date: 2015-04-21
- Inventor: Shinichi Uchida , Yasutaka Nakashiba
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2013-017678 20130131
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01F21/12 ; H01L49/02 ; H01L23/64

Abstract:
An inductor device includes an insulation layer, an inductor, fixed electrodes, and a movable electrode. The inductor is formed on the insulation layer. The fixed electrodes are provided in positions which do not overlap with the inductor in a planar view. The movable electrode overlaps with the inductor and the fixed electrodes in the planar view, and is separated from the inductor and the fixed electrodes. Further, the movable electrode includes first openings.
Public/Granted literature
- US20140210045A1 INDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2014-07-31
Information query
IPC分类: