Invention Grant
- Patent Title: Thermal improvement for hotspots on dies in integrated circuit packages
- Patent Title (中): 集成电路封装中芯片热点的热改进
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Application No.: US11514916Application Date: 2006-09-05
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Publication No.: US09013035B2Publication Date: 2015-04-21
- Inventor: Sam Ziqun Zhao , Rezaur Rahman Khan
- Applicant: Sam Ziqun Zhao , Rezaur Rahman Khan
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L23/10
- IPC: H01L23/10 ; H01L23/34 ; H01L23/433 ; H01L23/367 ; H01L23/498 ; H01L23/00

Abstract:
Methods and apparatuses for improved integrated circuit (IC) packages are described herein. In an aspect, an IC device package includes an IC die having a contact pad, where the contact pad is located on a hotspot of the IC die. The hotspot is thermally coupled to a thermal interconnect member. In an aspect, the package is encapsulated in a mold compound. In a further aspect, a heat spreader is attached to the mold compound, and is thermally coupled to the thermal interconnect member. In another aspect, a thermal interconnect member thermally is coupled between the heat spreader and the substrate.
Public/Granted literature
- US20070290322A1 Thermal improvement for hotspots on dies in integrated circuit packages Public/Granted day:2007-12-20
Information query
IPC分类: