Invention Grant
US09013041B2 Semiconductor package with ultra-thin interposer without through-semiconductor vias 有权
具有超薄插入式半导体封装,无需半导体通孔

Semiconductor package with ultra-thin interposer without through-semiconductor vias
Abstract:
There are disclosed herein various implementations of semiconductor packages including an interposer without through-semiconductor vias (TSVs). One exemplary implementation includes a first active die situated over an interposer. The interposer includes an interposer dielectric having intra-interposer routing traces. The first active die communicates electrical signals to a package substrate situated below the interposer utilizing the intra-interposer routing traces and without utilizing TSVs. In one implementation, the semiconductor package includes a second active die situated over the interposer, the second active die communicating electrical signals to the package substrate utilizing the intra-interposer routing traces and without utilizing TSVs. Moreover, in one implementation, the first active die and the second active die communicate chip-to-chip signals through the interposer.
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