Invention Grant
- Patent Title: Charge-sharing type pixel structure
- Patent Title (中): 电荷共享型像素结构
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Application No.: US13511669Application Date: 2012-03-27
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Publication No.: US09013387B2Publication Date: 2015-04-21
- Inventor: Shih-hsun Lo , Minghung Shih
- Applicant: Shih-hsun Lo , Minghung Shih
- Applicant Address: CN Shenzhen
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Agent Mark M. Friedman
- Priority: CN201210074454 20120320
- International Application: PCT/CN2012/073082 WO 20120327
- International Announcement: WO2013/139046 WO 20130926
- Main IPC: G09G3/36
- IPC: G09G3/36 ; G02F1/1343 ; G02F1/1368 ; G02F1/1362

Abstract:
The present invention discloses a charge-sharing type pixel structure having a first sub-pixel and a second sub-pixel that each includes a transistor. The second sub-pixel further has a third transistor and a top-gate electrode. When the third transistor is switched on, original gray scale applied to a liquid crystal capacitor of the first sub-pixel varies due to charges being shared with other capacitors. The top-gate electrode change the threshold voltage of the third transistor according to biasing signal so as to further adjust the variation of the gray scale voltage applied to the liquid crystal capacitor of the first sub-pixel.
Public/Granted literature
- US20150015821A1 CHARGE-SHARING TYPE PIXEL STRUCTURE Public/Granted day:2015-01-15
Information query
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