Invention Grant
US09013848B2 Active clamp protection circuit for power semiconductor device for high frequency switching
有权
用于高频开关功率半导体器件的有源钳位保护电路
- Patent Title: Active clamp protection circuit for power semiconductor device for high frequency switching
- Patent Title (中): 用于高频开关功率半导体器件的有源钳位保护电路
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Application No.: US13628602Application Date: 2012-09-27
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Publication No.: US09013848B2Publication Date: 2015-04-21
- Inventor: Sik K. Lui
- Applicant: Alpha & Omega Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H02H3/20
- IPC: H02H3/20 ; H03K17/082 ; H01L27/02 ; H03K17/08
Abstract:
A protection circuit for a power transistor includes a first transistor connected in parallel with the power transistor and having a control terminal connected to a first power supply voltage through a first resistive element; and a first set of diodes connected between a first terminal and a control terminal of the first transistor. In operation, the voltage at the first terminal of the first transistor is clamped to a clamp voltage and the first transistor is turned on to conduct current in a forward conduction mode when an over-voltage condition occurs at a first terminal of the power transistor.
Public/Granted literature
- US20140085760A1 Active Clamp Protection Circuit For Power Semiconductor Device For High Frequency Switching Public/Granted day:2014-03-27
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