Invention Grant
- Patent Title: Memory system comprising translation lookaside buffer and translation information buffer and related method of operation
- Patent Title (中): 内存系统包括翻译后备缓冲区和翻译信息缓冲区及相关操作方法
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Application No.: US13303395Application Date: 2011-11-23
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Publication No.: US09015447B2Publication Date: 2015-04-21
- Inventor: Hyun Sun Ahn
- Applicant: Hyun Sun Ahn
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0118178 20101125
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/10
Abstract:
A memory system comprises a translation lookaside buffer (TLB) configured to receive a virtual address and to search for a TLB entry matching the virtual address, and a translation information buffer (TIB) configured to be connected to the TLB and determine whether a physical address corresponding to the virtual address falls into a continuous mapping area if the TLB entry matching the virtual address is not found.
Public/Granted literature
- US20120137105A1 MEMORY SYSTEM AND RELATED METHOD OF OPERATION Public/Granted day:2012-05-31
Information query
