A memory device includes a non-volatile memory configured to store a repair data and output the repair data in response to an initialization signal, a plurality of registers configured to store the repair data outputted from the non-volatile memory, a plurality of memory banks configured to replace normal cells with redundant cells by using the repair data stored in corresponding registers among the plurality of registers, a verification circuit configured to generate a completion signal for informing that transfer of the repair data from the non-volatile memory to the plurality of registers is completed, and an output circuit configured to output the completion signal to a device other than the memory device.