Invention Grant
US09018672B2 Semiconductor device comprising a semiconductor element having two electrodes
有权
半导体器件包括具有两个电极的半导体元件
- Patent Title: Semiconductor device comprising a semiconductor element having two electrodes
- Patent Title (中): 半导体器件包括具有两个电极的半导体元件
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Application No.: US14080921Application Date: 2013-11-15
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Publication No.: US09018672B2Publication Date: 2015-04-28
- Inventor: Ryota Sekiguchi , Alexis Debray , Yasushi Koyama , Kosuke Asano , Satoshi Yokoyama , Atsushi Kemmochi
- Applicant: Canon Kabushiki Kaisha
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2012-257596 20121126; JP2013-212391 20131009
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L23/66
Abstract:
Provided is a semiconductor device including: a semiconductor element arranged on a substrate and having two electrodes; a conductive strip in contact with one of the two electrodes; and a dielectric arranged between another one of the two electrodes and the conductive strip, in which the conductive strip has an opening formed therein, the dielectric has a void formed therein, and the opening and the void are connected to each other.
Public/Granted literature
- US20140145280A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR Public/Granted day:2014-05-29
Information query
IPC分类:
