Invention Grant
- Patent Title: Methods of operating memory devices
- Patent Title (中): 操作存储设备的方法
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Application No.: US14148256Application Date: 2014-01-06
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Publication No.: US09019762B2Publication Date: 2015-04-28
- Inventor: Nicholas Hendrickson
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/04 ; G11C11/56

Abstract:
Methods of operating a memory device include determining whether each memory cell selected for a sense operation has any data state of a first subset of data states of a plurality of data states, wherein whether a memory cell has a data state that is a member of the first subset of data states determines a data value of a first portion of the data state of that memory cell. The methods further include initiating a transfer of the data values of the first portions of the data states of the selected memory cells and continuing the particular sense operation to sense for additional data states of the plurality of data states.
Public/Granted literature
- US20140119128A1 METHODS OF OPERATING MEMORY DEVICES Public/Granted day:2014-05-01
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