Invention Grant
US09021227B2 Drift management in a phase change memory and switch (PCMS) memory device
有权
相变存储器和交换机（PCMS）存储器件中的漂移管理
- Patent Title: Drift management in a phase change memory and switch (PCMS) memory device
- Patent Title (中): 相变存储器和交换机（PCMS）存储器件中的漂移管理
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Application No.: US13166214Application Date: 2011-06-22
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Publication No.: US09021227B2Publication Date: 2015-04-28
- Inventor: Elijah V. Karpov , Gianpaolo Spadini
- Applicant: Elijah V. Karpov , Gianpaolo Spadini
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Alpine Technology Law Group LLC
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G11C13/00
Abstract:
The present disclosure relates to the drift management for a memory device. In at least one embodiment, the memory device of the present disclosure may include a phase change memory and switch (hereinafter “PCMS”) memory cell and a memory controller that is capable of implementing drift management to control drift. Other embodiments are described and claimed.
Public/Granted literature
- US20120331204A1 DRIFT MANAGEMENT IN A PHASE CHANGE MEMORY AND SWITCH (PCMS) MEMORY DEVICE Public/Granted day:2012-12-27
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