Invention Grant
- Patent Title: Plasma processing apparatus and temperature measuring method
- Patent Title (中): 等离子体处理装置和温度测量方法
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Application No.: US13428207Application Date: 2012-03-23
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Publication No.: US09022645B2Publication Date: 2015-05-05
- Inventor: Tatsuo Matsudo
- Applicant: Tatsuo Matsudo
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2011-064463 20110323
- Main IPC: G01J5/08
- IPC: G01J5/08 ; G01K1/02 ; G01K5/48 ; G01K11/12

Abstract:
A plasma processing apparatus and a temperature measuring method that may measure a temperature of an object in a processing chamber by a low-coherence interferometer without forming a hole in a holding stage or an upper electrode of the plasma processing apparatus, thereby performing a plasma process of a substrate with high precision and uniformity. The plasma processing apparatus is implemented by disposing a light source collimator outside of a light source window, disposing a light-receiving collimator outside of a light-receiving window, allowing a measurement light emitted from the light source collimator to pass through the light source window to be obliquely emitted to a surface of the object to be measured, and allowing the reflected measurement light to pass through the light-receiving window to be incident on the light-receiving collimator. The temperature of the object in the processing chamber may be measured by the low-coherence interferometer.
Public/Granted literature
- US20120243573A1 PLASMA PROCESSING APPARATUS AND TEMPERATURE MEASURING METHOD Public/Granted day:2012-09-27
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