Invention Grant
- Patent Title: Etching method and devices produced using the etching method
- Patent Title (中): 蚀刻方法和使用蚀刻方法制造的器件
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Application No.: US14127277Application Date: 2012-07-13
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Publication No.: US09023229B2Publication Date: 2015-05-05
- Inventor: Muthu Sebastian , Fong Liang Tan
- Applicant: Muthu Sebastian , Fong Liang Tan
- Applicant Address: US MN St. Paul
- Assignee: 3M Innovative Properties Company
- Current Assignee: 3M Innovative Properties Company
- Current Assignee Address: US MN St. Paul
- Agent Clifton F. Richardson
- Priority: SG201105168-7 20110714
- International Application: PCT/US2012/046640 WO 20120713
- International Announcement: WO2013/010067 WO 20130117
- Main IPC: C03C15/00
- IPC: C03C15/00 ; C23F1/30 ; C09K13/04 ; G06F3/044
Abstract:
A double ITO structure, containing sequential layers of indium tin oxide (ITO), silicon dioxide (SiO2) (which may include a dopant material) and ITO, is selectively protected by a patterned photo-resist mask. The sequential layers are etched together in a single etching step using an etchant composition which is an acidic solution containing a transition metal chloride and hydrochloric acid (HCl). Thus, the double ITO structure is etched using a substantially fluoride-free etchant composition.
Public/Granted literature
- US20140124477A1 ETCHING METHOD AND DEVICES PRODUCED USING THE ETCHING METHOD Public/Granted day:2014-05-08
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