Invention Grant
- Patent Title: Ultratough single crystal boron-doped diamond
- Patent Title (中): 超纯单晶硼掺杂金刚石
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Application No.: US12435565Application Date: 2009-05-05
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Publication No.: US09023306B2Publication Date: 2015-05-05
- Inventor: Russell J. Hemley , Ho-Kwang Mao , Chih-Shiue Yan , Qi Liang
- Applicant: Russell J. Hemley , Ho-Kwang Mao , Chih-Shiue Yan , Qi Liang
- Applicant Address: US DC Washington
- Assignee: Carnegie Institution of Washington
- Current Assignee: Carnegie Institution of Washington
- Current Assignee Address: US DC Washington
- Agency: Morgan Lewis & Bockius LLP
- Main IPC: B01J3/06
- IPC: B01J3/06 ; B01J3/08 ; C30B23/00 ; C30B25/00 ; C30B28/12 ; C30B28/14 ; C23C16/27 ; C30B25/16 ; C30B25/10 ; C30B29/04
Abstract:
The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 μm/h.
Public/Granted literature
- US20100123098A1 ULTRATOUGH SINGLE CRYSTAL BORON-DOPED DIAMOND Public/Granted day:2010-05-20
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