Invention Grant
- Patent Title: Production of large, high purity single crystal CVD diamond
- Patent Title (中): 生产大型，高纯度单晶CVD金刚石
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Application No.: US13109528Application Date: 2011-05-17
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Publication No.: US09023307B2Publication Date: 2015-05-05
- Inventor: Russell J. Hemley , Yu-fei Meng , Chih-Shiue Yan , Ho-kwang Mao
- Applicant: Russell J. Hemley , Yu-fei Meng , Chih-Shiue Yan , Ho-kwang Mao
- Applicant Address: US DC Washington
- Assignee: Carnegie Institution of Washington
- Current Assignee: Carnegie Institution of Washington
- Current Assignee Address: US DC Washington
- Agency: Morgan Lewis & Bockius LLP
- Main IPC: C01B31/06
- IPC: C01B31/06 ; C30B25/18 ; C30B25/02 ; C30B29/04 ; C30B25/10
Abstract:
The invention relates to single crystal diamond with high optical quality and methods of making the same. The diamond possesses an intensity ratio of the second-order Raman peak to the fluorescence background of around 5 or greater.
Public/Granted literature
- US20110280790A1 Production of Large, High Purity Single Crystal CVD Diamond Public/Granted day:2011-11-17
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