Invention Grant
US09023581B2 Resist composition, method of forming resist pattern, polymeric compound, and compound
有权
抗蚀剂组合物，形成抗蚀剂图案的方法，聚合物和化合物
- Patent Title: Resist composition, method of forming resist pattern, polymeric compound, and compound
- Patent Title (中): 抗蚀剂组合物，形成抗蚀剂图案的方法，聚合物和化合物
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Application No.: US13703865Application Date: 2011-06-14
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Publication No.: US09023581B2Publication Date: 2015-05-05
- Inventor: Akiya Kawaue , Kazushige Dohtani , Yoshiyuki Utsumi , Jun Iwashita , Kenri Konno , Daiju Shiono , Daichi Takaki
- Applicant: Akiya Kawaue , Kazushige Dohtani , Yoshiyuki Utsumi , Jun Iwashita , Kenri Konno , Daiju Shiono , Daichi Takaki
- Applicant Address: JP Kawasaki-shi
- Assignee: Tokyo Ohka Kogyo Co., Ltd
- Current Assignee: Tokyo Ohka Kogyo Co., Ltd
- Current Assignee Address: JP Kawasaki-shi
- Agency: Knobbe Martens Olsen & Bear LLP
- Priority: JP2010-136313 20100615
- International Application: PCT/JP2011/063560 WO 20110614
- International Announcement: WO2011/158817 WO 20111222
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/30 ; C07C69/54 ; C08F220/38 ; G03F7/027 ; C07C309/04 ; C07C309/09 ; C07C309/10 ; C07C309/12 ; C07C311/48 ; C07C311/51 ; C07C381/12 ; C08F20/38 ; G03F7/039 ; G03F7/20
Abstract:
A resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The resist composition contains a polymeric compound containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2).
Public/Granted literature
- US20130089819A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND Public/Granted day:2013-04-11
Information query
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