Invention Grant
US09023663B2 Method for preparing nano-sheet array structure of group V-VI semiconductor
有权
制备V-VI族半导体纳米片阵列结构的方法
- Patent Title: Method for preparing nano-sheet array structure of group V-VI semiconductor
- Patent Title (中): 制备V-VI族半导体纳米片阵列结构的方法
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Application No.: US14265898Application Date: 2014-04-30
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Publication No.: US09023663B2Publication Date: 2015-05-05
- Inventor: Yu-Lun Chueh , Hung-Wei Tsai , Tsung-Cheng Chan
- Applicant: National Tsing Hua University
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW102115752A 20130502
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L35/34
Abstract:
The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.
Public/Granted literature
- US20140329338A1 METHOD FOR PREPARING NANO-SHEET ARRAY STRUCTURE OF GROUP V-VI SEMICONDUCTOR Public/Granted day:2014-11-06
Information query
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