Invention Grant
US09023699B2 Resistive random access memory (RRAM) structure and method of making the RRAM structure
有权
电阻随机存取存储器（RRAM）结构和RRAM结构的制作方法
- Patent Title: Resistive random access memory (RRAM) structure and method of making the RRAM structure
- Patent Title (中): 电阻随机存取存储器（RRAM）结构和RRAM结构的制作方法
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Application No.: US13722345Application Date: 2012-12-20
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Publication No.: US09023699B2Publication Date: 2015-05-05
- Inventor: Chih-Yang Chang , Wen-Ting Chu , Kuo-Chi Tu , Yu-Wen Liao , Hsia-Wei Chen , Chin-Chieh Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L45/00 ; H01L27/24
Abstract:
The present disclosure provides a resistive random access memory (RRAM) cell. The RRAM cell includes a transistor, a bottom electrode adjacent to a drain region of the transistor and coplanar with the gate, a resistive material layer on the bottom electrode, a top electrode on the resistive material layer, and a conductive material connecting the bottom electrode to the drain region.
Public/Granted literature
- US20140175365A1 RESISTIVE RANDOM ACCESS MEMORY (RRAM) STRUCTURE AND METHOD OF MAKING THE RRAM STRUCTURE Public/Granted day:2014-06-26
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