Invention Grant
- Patent Title: Semiconductor memory device and manufacturing method thereof
- Patent Title (中): 半导体存储器件及其制造方法
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Application No.: US13675975Application Date: 2012-11-13
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Publication No.: US09023710B2Publication Date: 2015-05-05
- Inventor: Jia Xu , GuanPing Wu , Chao Zhang , Daisy Liu
- Applicant: Semiconductor Manufacturing International Corporation , Semiconductor Manufacturing International Corporation
- Applicant Address: CN CN
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN CN
- Agency: Innovation Counsel LLP
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element.
Public/Granted literature
- US20130075688A1 Semiconductor Memory Device and Manufacturing Method Thereof Public/Granted day:2013-03-28
Information query
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