Invention Grant
- Patent Title: Methods for forming a conductive material and methods for forming a conductive structure
- Patent Title (中): 形成导电材料的方法和形成导电结构的方法
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Application No.: US14277507Application Date: 2014-05-14
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Publication No.: US09023711B2Publication Date: 2015-05-05
- Inventor: Eugene P. Marsh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/768 ; C23C16/04 ; C23C16/18 ; H01L21/285 ; H01L23/522 ; H01L27/108 ; H01L49/02
Abstract:
A method of forming a conductive material comprises forming at least one opening extending through an organic material and an insulative material underlying the organic material to expose at least a portion of a substrate and a conductive contact in the substrate. The method further comprises lining exposed surfaces of the insulative material, the conductive contact, and the at least a portion of the substrate in the at least one opening with a conductive material without forming the conductive material on the organic material.
Public/Granted literature
- US20140248771A1 METHODS FOR FORMING A CONDUCTIVE MATERIAL AND METHODS FOR FORMING A CONDUCTIVE STRUCTURE Public/Granted day:2014-09-04
Information query
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