Invention Grant
- Patent Title: Method of fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14165857Application Date: 2014-01-28
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Publication No.: US09023718B2Publication Date: 2015-05-05
- Inventor: Jin-Ho Do , Ha-Jin Lim , Weon-Hong Kim , Hoi-Sung Chung , Moon-Kyun Song , Dae-Kwon Joo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2010-0054420 20100609
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/28 ; H01L29/51
Abstract:
A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.
Public/Granted literature
- US20140141599A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2014-05-22
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