Invention Grant
- Patent Title: Method of manufacturing semiconductor packaging
- Patent Title (中): 制造半导体封装的方法
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Application No.: US13534289Application Date: 2012-06-27
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Publication No.: US09023727B2Publication Date: 2015-05-05
- Inventor: Geng Shin Shen
- Applicant: Geng Shin Shen
- Applicant Address: TW Hsinchu
- Assignee: Chipmos Technologies Inc.
- Current Assignee: Chipmos Technologies Inc.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King; Kay Yang
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L23/00

Abstract:
The present disclosure is related to a method of providing a die structure for semiconductor packaging. The method includes providing a substrate with a bonding pad; forming a patterned mask layer on the substrate; forming an opening on the mask layer; depositing a conductive layer in the opening; forming a cap layer on the conductive layer, and removing the mask layer. The cap layer forming step allows the contacting area between the cap layer and the conductive layer to be substantially equal to the top surface area of the conductive layer by reflowing solder material prior to the removal of the mask layer.
Public/Granted literature
- US20140004697A1 METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGING Public/Granted day:2014-01-02
Information query
IPC分类: