Invention Grant
- Patent Title: Method for block-copolymer lithography
- Patent Title (中): 嵌段共聚物光刻法
-
Application No.: US14038565Application Date: 2013-09-26
-
Publication No.: US09023733B2Publication Date: 2015-05-05
- Inventor: Boon Teik Chan , Shigeru Tahara
- Applicant: IMEC , Tokyo Electron Limited
- Applicant Address: BE Leuven JP Tokyo
- Assignee: IMEC,Tokyo Electron Limited
- Current Assignee: IMEC,Tokyo Electron Limited
- Current Assignee Address: BE Leuven JP Tokyo
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP12187058 20121002
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/4763 ; H01L21/20 ; H01L21/36 ; H01L21/027 ; B81C1/00 ; H01L21/033 ; H01L21/311
Abstract:
The present disclosure relates to a method (10) for block-copolymer lithography. This method comprises the step of obtaining (12) a self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, and the steps of applying at least once each of first plasma etching (14) of said self-organizing block-copolymer layer using a plasma formed from a substantially ashing gas, and second plasma etching (16) of said self-organizing block-copolymer layer using plasma formed from a pure inert gas or mixture of inert gases in order to selectively remove a first polymer phase. A corresponding intermediate product also is described.
Public/Granted literature
- US20140091435A1 Etching of Block-Copolymers Public/Granted day:2014-04-03
Information query
IPC分类:
