Invention Grant
US09023764B2 Oxide superconductor, oriented oxide thin film, and method for manufacturing oxide superconductor
有权
氧化物超导体,取向氧化物薄膜,以及氧化物超导体的制造方法
- Patent Title: Oxide superconductor, oriented oxide thin film, and method for manufacturing oxide superconductor
- Patent Title (中): 氧化物超导体,取向氧化物薄膜,以及氧化物超导体的制造方法
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Application No.: US13766994Application Date: 2013-02-14
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Publication No.: US09023764B2Publication Date: 2015-05-05
- Inventor: Takeshi Araki , Mariko Hayashi , Ko Yamada , Hiroyuki Fuke
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-068377 20120323
- Main IPC: H01B12/06
- IPC: H01B12/06 ; H01L39/24 ; B05D5/12 ; B32B18/00 ; C04B35/45 ; H01L39/12 ; C04B35/624

Abstract:
According to one embodiment, an oxide superconductor includes an oriented superconductor layer and an oxide layer. The oriented superconductor layer contains fluorine at 2.0×1016-5.0×1019 atoms/cc and carbon at 1.0×1018-5.0×1020 atoms/cc. The superconductor layer contains in 90% or more a portion oriented along c-axis with an in-plane orientation degree (Δφ) of 10 degrees or less, and contains a LnBa2Cu3O7-x superconductor material (Ln being yttrium or a lanthanoid except cerium, praseodymium, promethium, and lutetium). The oxide layer is provided in contact with a lower surface of the superconductor layer and oriented with an in-plane orientation degree (Δφ) of 10 degrees or less with respect to one crystal axis of the superconductor layer. Area of a portion of the lower surface of the superconductor layer in contact with the oxide layer is 0.3 or less of area of a region directly below the superconductor layer.
Public/Granted literature
- US20140031236A1 OXIDE SUPERCONDUCTOR, ORIENTED OXIDE THIN FILM, AND METHOD FOR MANUFACTURING OXIDE SUPERCONDUCTOR Public/Granted day:2014-01-30
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