Invention Grant
- Patent Title: Method for purifying resin for photolithography
- Patent Title (中): 光刻树脂精制方法
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Application No.: US14071977Application Date: 2013-11-05
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Publication No.: US09023982B2Publication Date: 2015-05-05
- Inventor: Tomo Oikawa
- Applicant: Maruzen Petrochemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Maruzen Petrochemical Co., Ltd.
- Current Assignee: Maruzen Petrochemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Burr & Brown, PLLC
- Priority: JP2012-265529 20121204
- Main IPC: C08G63/02
- IPC: C08G63/02 ; C08F220/10 ; C08F232/08 ; C08G64/00 ; C08F6/28

Abstract:
A method is provided for purifying a resin for photolithography wherein, from an insufficiently purified resin (also referred to as “crude resin”), low molecular weight impurities such as an unreacted monomer and a polymerization initiator, which cause a development defect of a resist pattern or deterioration of the storage stability of the resin for photolithography can be removed more effectively. The method for purifying a resin for photolithography includes an operation (a) wherein a slurry in which a resin is dispersed in a solution containing a good solvent and a poor solvent is stirred, and then an operation (b) wherein, to said slurry, a poor solvent is added to lower the ratio of the good solvent to the poor solvent, and then, the resin is separated from the solution.
Public/Granted literature
- US20140155564A1 METHOD FOR PURIFYING RESIN FOR PHOTOLITHOGRAPHY Public/Granted day:2014-06-05
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