Invention Grant
- Patent Title: Advanced device assembly structures and methods
- Patent Title (中): 先进的装置组装结构和方法
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Application No.: US13692148Application Date: 2012-12-03
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Publication No.: US09024205B2Publication Date: 2015-05-05
- Inventor: Cyprian Emeka Uzoh
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H05K1/16
- IPC: H05K1/16 ; H05K13/04 ; H01L23/10 ; H01L21/50 ; H01L23/498 ; H01L21/768 ; H01L23/48 ; H01L23/00 ; H01L21/48

Abstract:
A microelectronic assembly includes a first substrate having a surface and a first conductive element and a second substrate having a surface and a second conductive element. The assembly further includes an electrically conductive alloy mass joined to the first and second conductive elements. First and second materials of the alloy mass each have a melting point lower than a melting point of the alloy. A concentration of the first material varies in concentration from a relatively higher amount at a location disposed toward the first conductive element to a relatively lower amount toward the second conductive element, and a concentration of the second material varies in concentration from a relatively higher amount at a location disposed toward the second conductive element to a relatively lower amount toward the first conductive element.
Public/Granted literature
- US20140153210A1 ADVANCED DEVICE ASSEMBLY STRUCTURES AND METHODS Public/Granted day:2014-06-05
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