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US09024248B2 Semiconductor device to include a first transistor with a silicon channel formation region and a second transistor with an oxide semiconductor channel formation region 有权
半导体器件包括具有硅沟道形成区域的第一晶体管和具有氧化物半导体沟道形成区域的第二晶体管

Semiconductor device to include a first transistor with a silicon channel formation region and a second transistor with an oxide semiconductor channel formation region
Abstract:
A semiconductor device including photosensor capable of imaging with high resolution is disclosed. The semiconductor device includes the photosensor having a photodiode, a first transistor, and a second transistor. The photodiode generates an electric signal in accordance with the intensity of light. The first transistor stores charge in a gate thereof and converts the stored charge into an output signal. The second transistor transfers the electric signal generated by the photodiode to the gate of the first transistor and holds the charge stored in the gate of the first transistor. The first transistor has a back gate and the threshold voltage thereof is changed by changing the potential of the back gate.
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