Invention Grant
US09024248B2 Semiconductor device to include a first transistor with a silicon channel formation region and a second transistor with an oxide semiconductor channel formation region
有权
半导体器件包括具有硅沟道形成区域的第一晶体管和具有氧化物半导体沟道形成区域的第二晶体管
- Patent Title: Semiconductor device to include a first transistor with a silicon channel formation region and a second transistor with an oxide semiconductor channel formation region
- Patent Title (中): 半导体器件包括具有硅沟道形成区域的第一晶体管和具有氧化物半导体沟道形成区域的第二晶体管
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Application No.: US14037751Application Date: 2013-09-26
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Publication No.: US09024248B2Publication Date: 2015-05-05
- Inventor: Yoshiyuki Kurokawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-028762 20100212
- Main IPC: H01J40/14
- IPC: H01J40/14 ; H01L31/00 ; H01L31/032 ; H01L27/12 ; H01L27/146 ; H01L29/786 ; H04N5/232 ; H04N5/335 ; H04N5/374

Abstract:
A semiconductor device including photosensor capable of imaging with high resolution is disclosed. The semiconductor device includes the photosensor having a photodiode, a first transistor, and a second transistor. The photodiode generates an electric signal in accordance with the intensity of light. The first transistor stores charge in a gate thereof and converts the stored charge into an output signal. The second transistor transfers the electric signal generated by the photodiode to the gate of the first transistor and holds the charge stored in the gate of the first transistor. The first transistor has a back gate and the threshold voltage thereof is changed by changing the potential of the back gate.
Public/Granted literature
- US20140027768A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF Public/Granted day:2014-01-30
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