Invention Grant
US09024269B2 High yield complementary metal-oxide semiconductor X-ray detector
有权
高产量互补金属氧化物半导体X射线检测器
- Patent Title: High yield complementary metal-oxide semiconductor X-ray detector
- Patent Title (中): 高产量互补金属氧化物半导体X射线检测器
-
Application No.: US13728299Application Date: 2012-12-27
-
Publication No.: US09024269B2Publication Date: 2015-05-05
- Inventor: James Zhengshe Liu
- Applicant: General Electric Company
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Main IPC: G01T1/20
- IPC: G01T1/20 ; H01L31/18 ; H01L27/146

Abstract:
A digital X-ray detector includes a scintillator that is configured to absorb radiation emitted from an X-ray radiation source and to emit light photons in response to the absorbed radiation. The detector also includes a complementary metal-oxide-semiconductor (CMOS) light imager that is configured to absorb the light photons emitted by the scintillator. The CMOS light imager includes a first surface and a second surface. The first surface is disposed opposite the second surface. The scintillator contacts the first surface of the CMOS light imager. The CMOS light imager further includes a CMOS pixel array with an array of CMOS pixels. Each individual CMOS pixel includes at least two row select transistors.
Public/Granted literature
- US20140183676A1 High Yield Complementary Metal-Oxide Semiconductor X-ray Detector Public/Granted day:2014-07-03
Information query