Invention Grant
- Patent Title: Memory device
- Patent Title (中): 内存设备
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Application No.: US14453781Application Date: 2014-08-07
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Publication No.: US09024287B2Publication Date: 2015-05-05
- Inventor: Takayuki Ishikawa , Hiroki Tanaka , Shosuke Fujii
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-192382 20130917
- Main IPC: H01L45/02
- IPC: H01L45/02 ; H01L45/00
Abstract:
According to one embodiment, a memory device includes a first electrode, a second electrode and an insulating portion. The first electrode includes an ionizable metal. The second electrode includes a conductive material. The conductive material is more difficult to ionize than the metal. The insulating portion is provided between the first electrode and the second electrode. The insulating portion is made of an insulating material. A space is adjacent to a side surface of the insulating portion between the first electrode and the second electrode.
Public/Granted literature
- US20150076440A1 MEMORY DEVICE Public/Granted day:2015-03-19
Information query
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