Invention Grant
US09024292B2 Monolithic semiconductor light emitting devices and methods of making the same 有权
单片半导体发光器件及其制造方法

Monolithic semiconductor light emitting devices and methods of making the same
Abstract:
A monolithic semiconductor light emitting device is described. The device includes an n-type region, a p-type region, an active region of a multiple quantum well structure comprising a plurality of alternating barrier and active layers interposed between the n-type region and the p-type region. The device emits multiple single-wavelength spectral distributions of ultraviolet light each having a peak wavelength of between 210 nm and 400 nm and/or a broadband spectral output having a wavelength of between 210 nm and 400 nm. Methods of making the device and lamps comprising the device are also described.
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