Invention Grant
- Patent Title: Monolithic semiconductor light emitting devices and methods of making the same
- Patent Title (中): 单片半导体发光器件及其制造方法
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Application No.: US13907469Application Date: 2013-05-31
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Publication No.: US09024292B2Publication Date: 2015-05-05
- Inventor: Xiaohang Li
- Applicant: Xiaohang Li
- Agency: Morris, Manning & Martin, LLP
- Agent Christopher W. Raimund
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L33/08 ; H01L33/06 ; H01L33/32 ; H01L33/00 ; H01L33/18 ; H01L33/24

Abstract:
A monolithic semiconductor light emitting device is described. The device includes an n-type region, a p-type region, an active region of a multiple quantum well structure comprising a plurality of alternating barrier and active layers interposed between the n-type region and the p-type region. The device emits multiple single-wavelength spectral distributions of ultraviolet light each having a peak wavelength of between 210 nm and 400 nm and/or a broadband spectral output having a wavelength of between 210 nm and 400 nm. Methods of making the device and lamps comprising the device are also described.
Public/Granted literature
- US20130320299A1 MONOLITHIC SEMICONDUCTOR LIGHT EMITTING DEVICES AND METHODS OF MAKING THE SAME Public/Granted day:2013-12-05
Information query
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