Invention Grant
- Patent Title: Epitaxial structure
- Patent Title (中): 外延结构
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Application No.: US13273252Application Date: 2011-10-14
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Publication No.: US09024310B2Publication Date: 2015-05-05
- Inventor: Yang Wei , Chen Feng , Shou-Shan Fan
- Applicant: Yang Wei , Chen Feng , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201110005809 20110112; CN201110025710 20110124; CN201110025768 20110124; CN201110025832 20110124; CN201110076867 20110329; CN201110076876 20110329; CN201110076886 20110329; CN201110076887 20110329; CN201110076893 20110329; CN201110076901 20110329; CN201110076903 20110329; CN201110077488 20110329; CN201110095149 20110415
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L33/12 ; B82Y30/00 ; B82Y40/00 ; C30B25/02 ; C30B25/18 ; C30B29/40 ; H01L29/06 ; H01L33/00

Abstract:
An epitaxial structure is provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube layer. The epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween.
Public/Granted literature
- US20120175606A1 EPITAXIAL STRUCTURE Public/Granted day:2012-07-12
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