Invention Grant
US09024312B2 Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor
有权
用于柔性器件的衬底，用于柔性器件的薄膜晶体管衬底，柔性器件，用于薄膜元件的衬底，薄膜元件，薄膜晶体管，用于制造薄膜元件的衬底的方法，薄膜元件的制造方法和制造方法 薄膜晶体管
- Patent Title: Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor
- Patent Title (中): 用于柔性器件的衬底，用于柔性器件的薄膜晶体管衬底，柔性器件，用于薄膜元件的衬底，薄膜元件，薄膜晶体管，用于制造薄膜元件的衬底的方法，薄膜元件的制造方法和制造方法 薄膜晶体管
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Application No.: US13499097Application Date: 2010-09-29
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Publication No.: US09024312B2Publication Date: 2015-05-05
- Inventor: Shunji Fukuda , Katsuya Sakayori , Keita Arihara , Koji Ichimura , Kei Amagai
- Applicant: Shunji Fukuda , Katsuya Sakayori , Keita Arihara , Koji Ichimura , Kei Amagai
- Applicant Address: JP Tokyo-to
- Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee Address: JP Tokyo-to
- Agency: Ladas & Parry LLP
- Priority: JP2009-228889 20090930; JP2010-090948 20100409; JP2010-090949 20100409; JP2010-090950 20100409
- International Application: PCT/JP2010/066912 WO 20100929
- International Announcement: WO2011/040440 WO 20110407
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L51/00 ; H01L29/786 ; H01L27/12 ; H01L27/32 ; H01L51/52
Abstract:
Disclosed is a substrate for a flexible device which, when a TFT is produced on a flexible substrate in which a metal layer and a polyimide layer are laminated, can suppress deterioration of the electrical performance of the TFT due to the surface irregularities of the metal foil surface and can suppress detachment or cracks of the TFT. Also disclosed is a substrate for a thin film element which has excellent surface smoothness and is capable of suppressing deterioration of the characteristics of thin film elements. Also disclosed are methods for manufacturing substrates for thin film elements.
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