An electronic device comprises at least one static induction transistor (14; 114; 214) and at least one thin film transistor (16; 116). The static induction transistor (14; 114; 214) has a first channel (14.4; 114.4; 214.4) of a semi conducting material extending between a first main electrode (14.2; 114.2; 214.2) and a second main electrode (14.3; 114.3) through a first and a second insulating layer (11, 13; 111, 113), and has a first control electrode (14.1; 114.1) surrounding the first channel and extending between the first and the second insulating layer. The thin film transistor (16; 116) has a third main electrode (16.2; 116.2) and a fourth main electrode (16.3; 116.3) coupled by a second channel (16.4; 116.4) of a semi conducting material and a second control electrode (16.1; 116.1). At least one of the first and the second insulating layer functions as a dielectric layer between the second control electrode and the second channel.