Invention Grant
- Patent Title: GaN dual field plate device with single field plate metal
- Patent Title (中): 具有单场板金属的GaN双场板器件
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Application No.: US13603801Application Date: 2012-09-05
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Publication No.: US09024324B2Publication Date: 2015-05-05
- Inventor: James A. Teplik , Bruce M. Green
- Applicant: James A. Teplik , Bruce M. Green
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Terrile, Cannatti, Chambers & Holland, LLP
- Agent Michael Rocco Cannatti
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/40 ; H01L29/66 ; H01L29/20
Abstract:
A low leakage current transistor (2) is provided which includes a GaN-containing substrate (11-14) covered by a passivation surface layer (17) in which a T-gate electrode with sidewall extensions (20) is formed and coated with a multi-level passivation layer (30-32) which includes an intermediate etch stop layer (31) which is used to define a continuous multi-region field plate (33) having multiple distances between the bottom surface of the field plate 33 and the semiconductor substrate in the gate-drain region of the transistor.
Public/Granted literature
- US20140061659A1 GaN Dual Field Plate Device with Single Field Plate Metal Public/Granted day:2014-03-06
Information query
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