Invention Grant
- Patent Title: Semiconductor light emitting element
- Patent Title (中): 半导体发光元件
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Application No.: US13200927Application Date: 2011-10-05
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Publication No.: US09024342B2Publication Date: 2015-05-05
- Inventor: Masao Kamiya , Masashi Deguchi
- Applicant: Masao Kamiya , Masashi Deguchi
- Applicant Address: JP Kiyosu-Shi, Aichi-Ken
- Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee Address: JP Kiyosu-Shi, Aichi-Ken
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-271602 20101206
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/38 ; H01L33/22

Abstract:
A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer. The light is extracted in a direction from the light emitting layer toward the first conductive type layer. The first conductive type layer includes a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.
Public/Granted literature
- US20120138984A1 Semiconductor light emitting element Public/Granted day:2012-06-07
Information query
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