According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode and a fluorescent material layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The fluorescent material layer includes a plurality of fluorescent materials and a bonding material integrating the fluorescent materials. The fluorescent material layer includes a lower layer portion provided to spread over the entire first surface and having a larger thickness than a size of the fluorescent materials and an upper layer portion partially provided on the lower layer portion and having a larger thickness and a larger width than a size of the fluorescent materials. The fluorescent materials do not exist on a portion of the lower layer portion not provided with the upper layer portion.