Invention Grant
- Patent Title: Semiconductor light-emitting structure
- Patent Title (中): 半导体发光结构
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Application No.: US13431985Application Date: 2012-03-28
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Publication No.: US09024351B2Publication Date: 2015-05-05
- Inventor: Der-Wei Tu , Wei-Chih Wen , Tai-Chun Wang , Po-Hung Lai , Chih-Ping Hsu
- Applicant: Der-Wei Tu , Wei-Chih Wen , Tai-Chun Wang , Po-Hung Lai , Chih-Ping Hsu
- Applicant Address: TW Taichung
- Assignee: Huga Optotech Inc.
- Current Assignee: Huga Optotech Inc.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW100111560A 20110401
- Main IPC: H01L33/36
- IPC: H01L33/36 ; H01L33/44

Abstract:
A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.
Public/Granted literature
- US20120248405A1 SEMICONDUCTOR LIGHT-EMITTING STRUCTURE Public/Granted day:2012-10-04
Information query
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