Invention Grant
- Patent Title: Compound semiconductor device with embedded electrode controlling a potential of the buffer layer
- Patent Title (中): 具有控制缓冲层电位的嵌入式电极的复合半导体器件
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Application No.: US13732596Application Date: 2013-01-02
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Publication No.: US09024358B2Publication Date: 2015-05-05
- Inventor: Junji Kotani
- Applicant: Fujitsu Limited
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2012-080877 20120330
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/40 ; H01L29/66 ; H01L29/778 ; H01L29/06
Abstract:
A compound semiconductor device includes a substrate; a buffer layer formed on the substrate; an electron transit layer and an electron donating layer formed on the buffer layer; a gate electrode, a source electrode, and a drain electrode formed on the electron donating layer; and an embedded electrode to which a potential independent of the gate electrode, the source electrode, and the drain electrode is supplied to control a potential of the buffer layer.
Public/Granted literature
- US20130257539A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-10-03
Information query
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