Invention Grant
- Patent Title: High voltage junction field effect transistor and manufacturing method thereof
- Patent Title (中): 高压结场效应晶体管及其制造方法
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Application No.: US13608260Application Date: 2012-09-10
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Publication No.: US09024365B2Publication Date: 2015-05-05
- Inventor: Li-Fan Chen , Wing-Chor Chan , Jeng Gong
- Applicant: Li-Fan Chen , Wing-Chor Chan , Jeng Gong
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/808 ; H01L29/06 ; H01L29/10
Abstract:
A high voltage junction field effect transistor and a manufacturing method thereof are provided. The high voltage junction field effect transistor includes a base, a drain, a source and a P type top layer. The drain and the source are disposed above the base. A channel is formed between the source and the drain. The P type top layer is disposed above the channel.
Public/Granted literature
- US20140070281A1 HIGH VOLTAGE JUNCTION FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-03-13
Information query
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