Invention Grant
- Patent Title: Metal shield structure and methods for BSI image sensors
- Patent Title (中): BSI图像传感器的金属屏蔽结构和方法
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Application No.: US13718688Application Date: 2012-12-18
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Publication No.: US09024369B2Publication Date: 2015-05-05
- Inventor: Shiu-Ko JangJian , Chi-Cherng Jeng , Volume Chien , Ying-Lang Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L31/113
- IPC: H01L31/113 ; H01L31/062 ; H01L31/18 ; H01L27/146
Abstract:
A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein an interconnect layer is formed over the first side of the semiconductor substrate, a backside illumination film formed over a second side of the semiconductor substrate, a metal shielding layer formed over the backside illumination film and a via embedded in the backside illumination film and coupled between the metal shielding layer and the semiconductor substrate.
Public/Granted literature
- US20140167197A1 Metal Shield Structure and Methods for BSI Image Sensors Public/Granted day:2014-06-19
Information query
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