Invention Grant
- Patent Title: Semiconductor device with air gap and method for fabricating the same
- Patent Title (中): 具有气隙的半导体器件及其制造方法
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Application No.: US14081533Application Date: 2013-11-15
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Publication No.: US09024371B2Publication Date: 2015-05-05
- Inventor: Nam-Yeal Lee , Seung-Jin Yeom
- Applicant: SK Hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0081885 20130712
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L23/532 ; H01L23/522 ; H01L23/528 ; H01L21/768
Abstract:
A semiconductor device includes a dielectric structure which has an opening exposing a surface of a substrate; and a conductive structure which is formed in the opening, wherein the conductive structure comprises: a first conductive pattern recessed in the opening; a second conductive pattern covering a top surface and sidewalls of the first conductive pattern; an air gap defined between sidewalls of the opening and the second conductive pattern; and a third conductive pattern capping the second conductive pattern and the air gap.
Public/Granted literature
- US20150014759A1 SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-01-15
Information query
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