Invention Grant
- Patent Title: Semiconductor device and fabricating method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13433630Application Date: 2012-03-29
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Publication No.: US09024381B2Publication Date: 2015-05-05
- Inventor: Moon-soo Cho , Kwang-yeon Jun , Hyuk Woo , Chang-sik Lim
- Applicant: Moon-soo Cho , Kwang-yeon Jun , Hyuk Woo , Chang-sik Lim
- Applicant Address: KR Cheongju-si
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2011-0141806 20111223
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/336 ; H01L29/06 ; H01L29/78 ; H01L29/10
Abstract:
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, and a super junction area that is disposed above the substrate. The super junction area may include pillars of different doping types that are alternately disposed. One of the pillars of the super junction area may have a doping concentration that gradually decreases and then increases from bottom to top in a vertical direction of the semiconductor device.
Public/Granted literature
- US20130161742A1 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF Public/Granted day:2013-06-27
Information query
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